| 摘要 |
PROBLEM TO BE SOLVED: To remarkably improve light-emitting characteristics in a semiconductor light-emitting device provided with a semiconductor layer containing Al between a substrate and an active layer containing nitrogen. SOLUTION: In a semiconductor light-emitting device provided with a semiconductor layer (202) containing Al between a substrate (201) and an active layer (204) containing nitrogen, concentration of oxygen of the active layer (204) containing nitrogen is equal to concentration (e.g. not higher than 1×10<SP>18</SP>cm<SP>-3</SP>) in which the semiconductor light-emitting device can continuously oscillate at room temperature. Thus, it is possible to improve light-emitting efficiency of the active layer (204) and to form the semiconductor light-emitting device which continuously oscillates at room temperature. COPYRIGHT: (C)2008,JPO&INPIT
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