| 摘要 |
PROBLEM TO BE SOLVED: To improve the long term reliability of a semiconductor light-emitting apparatus and reduce manufacturing cost. SOLUTION: Ni thin film layer is formed, by plating method, on a heat sink 1 consisting of Cu or CuW with small thermal resistance so that the layer has a film thickness of 2μm or more and 6μm or less. Then, a barrier metal layer 2 of Ti or NiTi which does not directly react with cooper, and, thereon, a metal layer 3 of wetting improvement for improving wetting with solder material are sequentially formed, by vapor deposition and sputter film forming method, under the same vacuum in a region four times as much as an area of an adhesion side of a semiconductor light-emitting element 5 in a surface to which the semiconductor light-emitting element 5 is adhered and a surface in which a light is emitted, so that the layers have thickness of 50 nm or more and 150 nm or less, respectively. The semiconductor light-emitting element 5 is formed by sequentially laminating an AlGaAs layer, a GaAs layer, a GaAsP layer and an InGaAs layer on a GaAs substrate, and forming an N electrode and a P electrode. While the semiconductor light emitting element 5 is pressed against the adhesion side of the heat sink 1 by a weight of 10-30g, an In wax material 4 is dissolved with a heat of about 200-250°C, and then, is cooled and fixed. COPYRIGHT: (C)2008,JPO&INPIT
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