| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory element and its manufacturing method. SOLUTION: The nonvolatile semiconductor memory element comprises a tunnel insulating film formed on a semiconductor substrate, an electric charge trap layer which is formed on the tunnel insulating film and includes a dielectric film of which a transition metal is doped, a blocking insulating film formed on the electric charge trap layer, and a gate electrode formed on the blocking insulating film. The dielectric film is preferred to be a high dielectric film such as HfO<SB>2</SB>film. Since a deep trap is formed by doping with a transition metal in the high dielectric film, a retention characteristics of the nonvolatile semiconductor memory element is improved. COPYRIGHT: (C)2008,JPO&INPIT
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