| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor that can be manufactured at a low cost, in which the parasitic capacitance is reduced and high-speed response is realized. SOLUTION: In an electronic element, the inside of a slot formed on a substrate has a structure as a conductive layer, a semiconductor layer, an insulating layer, and a first electrode layer are sequentially stacked, or such structure as a semiconductor layer, a conductive layer, an insulating layer, and a first electrode layer are stacked sequentially. Furthermore, a second electrode layer and a third electrode layer that contact the semiconductor layer but do not contact the conductive layer are formed. COPYRIGHT: (C)2008,JPO&INPIT
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