| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-quality laminated wafer for preventing voids, blisters, or the like from occurring by effectively removing an organic matter adhered onto the surface of a silicon wafer prior to lamination. SOLUTION: When the laminated wafer is manufactured; heat treatment is performed to each of two silicon wafers for active layers and support substrates at not less than 300°C for 1 minute or longer, in atmosphere containing 0.5-5 vol.% of oxygen to decompose the organic matter adhering onto the surface of the silicon wafer for removal prior to the lamination. COPYRIGHT: (C)2008,JPO&INPIT
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