发明名称 |
METHOD TO MAKE LOW RESISTANCE CONTACT |
摘要 |
Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.
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申请公布号 |
US2008035950(A1) |
申请公布日期 |
2008.02.14 |
申请号 |
US20070761897 |
申请日期 |
2007.06.12 |
申请人 |
CHU CHEN-FU;LIU WEN-HUANG;CHU JIUNN-YI;CHENG CHAO-CHEN;CHENG HAO-CHUN;FAN FENG-HSU;DOAN TRUNG T |
发明人 |
CHU CHEN-FU;LIU WEN-HUANG;CHU JIUNN-YI;CHENG CHAO-CHEN;CHENG HAO-CHUN;FAN FENG-HSU;DOAN TRUNG T. |
分类号 |
H01L21/00;H01L31/00;H01L33/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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