发明名称 |
Multi-Level Thin Film Capacitor on a Ceramic Substrate and Method of Manufacturing the Same |
摘要 |
In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
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申请公布号 |
US2008037200(A1) |
申请公布日期 |
2008.02.14 |
申请号 |
US20070734798 |
申请日期 |
2007.04.13 |
申请人 |
KOUTSAROFF IVOYL P;VANDERMEULEN MARK;CERVIN-LAWRY ANDREW;PATEL ATIN J |
发明人 |
KOUTSAROFF IVOYL P.;VANDERMEULEN MARK;CERVIN-LAWRY ANDREW;PATEL ATIN J. |
分类号 |
H01G4/06;H01G4/12;H01G4/33;H01L21/77;H01L23/498;H01L27/00;H01L27/01 |
主分类号 |
H01G4/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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