发明名称 Multi-Level Thin Film Capacitor on a Ceramic Substrate and Method of Manufacturing the Same
摘要 In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
申请公布号 US2008037200(A1) 申请公布日期 2008.02.14
申请号 US20070734798 申请日期 2007.04.13
申请人 KOUTSAROFF IVOYL P;VANDERMEULEN MARK;CERVIN-LAWRY ANDREW;PATEL ATIN J 发明人 KOUTSAROFF IVOYL P.;VANDERMEULEN MARK;CERVIN-LAWRY ANDREW;PATEL ATIN J.
分类号 H01G4/06;H01G4/12;H01G4/33;H01L21/77;H01L23/498;H01L27/00;H01L27/01 主分类号 H01G4/06
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