发明名称 |
Highly-selective metal etchants |
摘要 |
A highly selective metal wet etchant with an active ingredient comprising one or more types of molecules having two or more oxygen atoms is described. In one embodiment, the wet etchant is utilized to pattern a metal layer in a semiconductor structure. In another embodiment, a highly selective metal wet etchant with an active ingredient comprising one or more types of molecules having two or more oxygen atoms is used to pattern a metal gate electrode in a replacement gate processing scheme.
|
申请公布号 |
US2008038924(A1) |
申请公布日期 |
2008.02.14 |
申请号 |
US20060501379 |
申请日期 |
2006.08.08 |
申请人 |
RACHMADY WILLY;KAVALIEROS JACK T;LIU MARK Y;DOCZY MARK L |
发明人 |
RACHMADY WILLY;KAVALIEROS JACK T.;LIU MARK Y.;DOCZY MARK L. |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|