HARDMASK COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME

摘要

Disclosed is a hardmask composition for processing a resist underlayer film. The hardmask composition comprises: (a) an organosilane polymer having alkoxy groups prepared from a compound represented by [RO]₃ Si-R' (1) (wherein R is methyl or ethyl and R' is substituted or unsubstituted cyclic or acyclic alkyl), or an organosilane polymer having alkoxy groups prepared from the compound of Formula 1 and a compound represented by [RO]₃ Si-Ar (2) (wherein R is methyl or ethyl and Ar is an aromatic ring-containing functional group); and (b) a solvent. The hardmask composition has excellent film characteristics. In addition, the hardmask composition exhibits excellent hardmask characteristics, thus allowing a good pattern to be effectively transferred to a material layer. Particularly, the hardmask composition is highly stable during storage. Further disclosed is a method for producing a semiconductor integrated circuit device using the hardmask composition.