发明名称 A METHOD FOR ADJUSTING SUBSTRATE PROCESSING TIMES IN A SUBSTRATE POLISHING SYSTEM
摘要 <p>Aspects of the present invention include a method and an apparatus that may be utilized to adjust processing times in a substrate processing system. In one embodiment of the present invention, a pre-processing thickness measurement of a substrate while the substrate is in one of the polishing stations is taken. Then the substrate is processed in the polishing system for a predetermined processing time. A post-processing thickness measurement is taken while the substrate is in one of the polishing stations. A removal rate is calculated based on the pre-processing and the post-processing measurements and the predetermined processing time. A processing time is adjusted for one or more of the polishing stations based on the removal rate for use in subsequent processing of a production substrate.</p>
申请公布号 WO2007114964(A3) 申请公布日期 2008.02.14
申请号 WO2007US60107 申请日期 2007.01.04
申请人 APPLIED MATERIALS, INC.;KO, SEN-HOU;LEE, HARRY Q.;HSU, WEI-YUNG 发明人 KO, SEN-HOU;LEE, HARRY Q.;HSU, WEI-YUNG
分类号 H04H60/31;B24B37/04;B24B49/00 主分类号 H04H60/31
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