发明名称 CAPACITANCE-TYPE SENSOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a capacitance-type sensor with its sensitivity enhancement materialized through the use of an uncomplicated manufacturing process. SOLUTION: This capacitance-type sensor includes a substrate 3 with its part functioning as a diaphragm M and a back electrode B with these confronting each other, and includes: a space formation area X with a portion of the substrate 3 functioning as the diaphragm M separated from the back electrode B by a space 11; and a spacer formation area Y with a portion of the substrate 3 not functioning as the diaphragm M separated from the back electrode B by a spacer member S. This sensor is formed so that the substrate 3 and the back electrode B confront each other in parallel therewith in the formation area Y while the substrate 3 and the back electrode B confront each other in parallel therewith in the formation area X, and that a space between the substrate 3 and the back electrode B in the formation area Y is larger than a space between the substrate 3 and the back electrode B in the formation area X. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008032469(A) 申请公布日期 2008.02.14
申请号 JP20060204648 申请日期 2006.07.27
申请人 HOSIDEN CORP 发明人 OTSUJI TAKAHISA;HIRAI SEISAKU;SAEKI SHINICHI;YAMAMOTO AKIRA
分类号 G01H11/06;H01L29/84;H04R19/04;H04R31/00 主分类号 G01H11/06
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