发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 To easily obtain a resistance element with an adjustable resistance value, wherein the resistance value is within 1% or less of a desired design value, having a low parasitic capacitance and which permits a relatively large current to flow, in a semiconductor device wherein resistance elements are incorporated in a semiconductor substrate, the resistance values of the resistance elements can be adjusted within a fixed range, the first resistance element and second resistance element are disposed adjacent to each other within 500 mum, and both terminals of the second resistance element have two pads which are drawn out therefrom.
申请公布号 US2008036036(A1) 申请公布日期 2008.02.14
申请号 US20070771212 申请日期 2007.06.29
申请人 HITACHI, LTD. 发明人 WADA SHINICHIRO
分类号 H01L29/00 主分类号 H01L29/00
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