发明名称 CHEMICALLY MODIFIED CHEMICAL MECHANICAL POLISHING PAD
摘要 A method of CMP of a substrate surface includes providing a polishing pad having a polishing layer, that may be substantially free of abrasive particles, with a functional group chemically bonded (covalent or ionic) to the polishing layer. The functional group acts as an activator or catalyst for a compound of a polishing slurry to exhibit a higher material removal rate for removing selected portions of the surface of the substrate than exhibited in CMP of a substantially identical substrate in the presence of a substantially identical polishing slurry and a polishing pad wherein the substantially identical polishing layer does not have the functional group. The functional group may be derived from a compound comprising a polyamine, a polyelectrolyte, and/or an amino acid. A method of making the CMP pad and the CMP pad formed thereby is also disclosed.
申请公布号 US2008034670(A1) 申请公布日期 2008.02.14
申请号 US20070841213 申请日期 2007.08.20
申请人 PPG INDUSTRIES OHIO, INC. 发明人 LI YUZHUO;HELLRING STUART D.;KELEHER JASON;ZHANG TIANXI
分类号 C09K3/14;B24B37/04 主分类号 C09K3/14
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