| 摘要 |
A circuit and a method for inputting data in a semiconductor memory apparatus are provided to improve area margin by performing delay operation for input data with only simple circuit configuration rather than a circuit comprising a fuse. A control voltage generation unit(30) generates a control voltage having potential level according to power supply voltage and device kind information. A data delay unit(40-43) generates delay data by adding delay time corresponding to the control voltage to the input data. The power supply voltage information is a power supply voltage signal having information about a potential of an external supply voltage used by a semiconductor memory apparatus, and the device kind information is a first device kind signal and a second device kind signal having information about the kind of the semiconductor memory apparatus.
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