| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a sapphire single crystal appropriate for a white LED, various electronic devices and the like. <P>SOLUTION: A large-sized and high quality sapphire single crystal S is formed by melting a raw material (aluminum oxide) in a container 3 disposed at the inside of a single crystal growing apparatus 1, contacting a seed crystal 5 of sapphire to the liquid surface of an aluminum oxide molten liquid 4, thereafter rotating the seed crystal 5 at a peripheral speed of 0-12 mm/sec, growing the seed crystal 5 while descending a temperature of a furnace 2 at a rate of 0.2-2°C/hr after contacting it at the aluminum oxide molten liquid 4 so that the pulling distance d of the seed crystal 5 is less than 0-20% of a liquid surface height h1 of the aluminum oxide molten liquid 4, and hardening a molten aluminum oxide. <P>COPYRIGHT: (C)2008,JPO&INPIT |
