| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method capable of highly accurately controlling temperature distribution in a wafer surface, and extending the range of wafer temperatures allowed to be controlled. SOLUTION: The plasma processing apparatus is provided with a plurality of means for independently supplying or exhausting heat transfer gas between a member to be processed and the surface of an electrode to control inner-surface distribution of gas pressure for heat transfer, static electricity attraction electrodes are buried into an electrode surface as a plurality of independent areas, and DC voltages to be applied to respective areas are respective controlled to control the temperature distribution in the wafer surface. COPYRIGHT: (C)2008,JPO&INPIT
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