发明名称 Semiconductor device and method of manufacturing the same
摘要 The semiconductor device which can prevent destruction of a low dielectric constant film and a bump's destruction which consists of lead free solder both is obtained. A semiconductor package which has a semiconductor chip including a low dielectric constant film and a bump which consists of lead free solder, a wiring substrate by which flip chip junction of the semiconductor package was done via the bump, and under-filling resin, with which a gap between the semiconductor package and the wiring substrate is filled up, are provided. As for under-filling resin, the glass transition temperature is equal to or more than 125° C., the coefficient of thermal expansion in 125° C. is less than 40 ppm/° C., and the elastic modulus in 25° C. is less than 9 GPa.
申请公布号 US2008036083(A1) 申请公布日期 2008.02.14
申请号 US20070882662 申请日期 2007.08.03
申请人 RENESAS TECHNOLOGY CORP. 发明人 SAWADA YUKO;BABA SHINJI;SUGIMURA TAKAHIRO
分类号 H01L23/48;H01L21/00 主分类号 H01L23/48
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