发明名称 |
SEMICONDUCTOR DEVICES HAVING FIELD EFFECT TRANSISTORS |
摘要 |
A semiconductor device having a field effect transistor and a method of fabricating the same. In-situ doped epitaxial patterns are respectively formed at both sidewalls of a protruded channel pattern from a substrate by performing an in-situ doped epitaxial growth process. The in-situ doped epitaxial pattern has a conformal impurity concentration throughout. Accordingly, source/drain regions with a conformal impurity concentration are connected throughout a channel width of a channel region including both sidewalls of a protruded channel pattern. As a result, it is possible to maximize a driving current of the filed effect transistor, and an on-off characteristic can be highly stabilized.
|
申请公布号 |
US2008036001(A1) |
申请公布日期 |
2008.02.14 |
申请号 |
US20070832589 |
申请日期 |
2007.08.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YUN EUN-JUNG;CHO HYE-JIN;KIM DONG-WON;KIM SUNG-MIN |
分类号 |
H01L27/01;H01L29/78;H01L21/336;H01L21/8234;H01L29/423;H01L29/786 |
主分类号 |
H01L27/01 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|