GaxIn1-xN SUBSTRATE AND GaxIn1-xN SUBSTRATE CLEANING METHOD

摘要

It is possible to provide a Ga_xIn_1-xN substrate capable of achieving a stable growth of a high-quality epitaxial film and a cleaning method for obtaining the Ga_xIn_1-xN substrate. When the Ga_xIn_1-xN substrate has a 2-inch diameter, the number of particles existing on the Ga_xIn_1-xN substrate and having a particle diameter not smaller than 0.2 µm is not greater than 20. Moreover, in a photoelectric spectrum on the surface of the Ga_xIn_1-xN substrate obtained by the X-ray photoelectric spectrum method at the detection angle of 10 degrees, the ratio of the peak area of the C_1s electron and the N_1s electron (peak area of C_1s electron/peak area of N_1s electron) is not greater than 3.