SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要
<p>A channel layer (40) for forming a part of the carrier path between a source electrode (100) and a drain electrode (110) is formed on a drift layer (30). The channel layer (40) is composed of Ge granular crystals formed on the drift layer (30), and a cap layer covering the Ge granular crystals.</p>
申请公布号
WO2008018432(A1)
申请公布日期
2008.02.14
申请号
WO2007JP65403
申请日期
2007.08.07
申请人
TOYOTA JIDOSHA KABUSHIKI KAISHA;JAPAN FINE CERAMICS CENTER;SEKI, AKINORI;TANI, YUKARI;SHIBATA, NORIYOSHI
