NITRIDE SEMICONDUCTOR DEVICE

摘要

A nitride semiconductor device is provided to improve a current diffusion effect by depositing InGaN layer doped with different conductive impurities to form a current diffusion layer. An n-type nitride semiconductor layer(120) is formed on a substrate(100). A GaN layer(130a) and an InGaN layer(130b) are deposited on a portion of the n-type nitride semiconductor layer to form a current diffusion layer(130). An active layer(140) is formed on the current diffusion layer, and a p-type nitride semiconductor layer(150) is formed on the active layer. A p-type electrode(170) is formed on the p-type nitride semiconductor layer, and an n-type electrode(180) is formed on the n-type nitride semiconductor layer with no the current diffusion layer.