| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress read-out disturbance of a memory cell in a nonvolatile semiconductor storage device having memory cells with variable resistance elements having such a current-voltage characteristic as the electric resistance changes by applying voltage thereto, and a positive bias current made to flow by built-in rectifying action junction when a positive voltage is applied to the other electrode using one electrode as a reference electrode is larger than a negative bias current made to flow when a negative voltage is applied to the other electrode. <P>SOLUTION: The nonvolatile semiconductor storage device comprises: memory cell selecting circuits 16, 17 for selecting the memory cell from a memory cell array 25; a voltage supply circuit 22 for supplying voltage to the memory cell via the memory selecting circuits so as to apply a predetermined positive voltage to the variable resistance element of the selected memory cell according to read-out operation to the other electrode in the read-out operation, and a read-out circuit 23 for detecting a size of the positive bias current made to flow to the reference electrode from the other electrode and reading out the storage information of the selected memory cell. <P>COPYRIGHT: (C)2008,JPO&INPIT |
