| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device consuming less power and requiring less layout area. SOLUTION: This semiconductor integrated circuit device is formed on an SOI substrate. Each includes a p-channel MOS transistor 34 and an n-channel MOS transistor 35 serially connected between local power supply lines LL31 and LL32. The device has a plurality of inverters 31-33 connected in series, and transistors 36, 37 which turn on in a pulsing fashion in a predetermined cycle during a standby mode period, and always have a continuity in an active mode period, and provide the local power supply lines LL31 and LL32 with power supply potential Vcc and ground potential Vss, respectively. Thus, accumulated charge is discharged from the bodies of the transistors 34, 35, and the sub-threshold leakage current can be reduced. COPYRIGHT: (C)2008,JPO&INPIT
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