| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable doped silicon oxide spin-coating precursor solution. SOLUTION: A method for making a doped silicon oxide thin film using a doped silicon oxide precursor solution includes a step 12 of mixing silicon source in an organic acid and a step 14 of adding 2-methoxyethyl ether to the silicon source and organic acid to form a preliminary precursor solution. The resultant solution is heated, stirred 16, and filtered 18. A doping impurity is dissolved 20 in 2-methoxyethanol to form a doped source solution. The resultant doped source solution is mixed 22 with the preliminary precursor solution to form a doped silicon oxide precursor solution. A doped silicon oxide thin film is formed 24 on a wafer by spin coating. The thin film and the wafer are baked 26 at progressively increasing temperatures and then are annealed 28. COPYRIGHT: (C)2008,JPO&INPIT
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