| 摘要 |
PROBLEM TO BE SOLVED: To simultaneously prevent a crosstalk between pixels in a solid-state image sensing device owing to reflection (cause (I)) on the surface of a semiconductor chip or on metal wirings arranged on the outside of the surface, and owing to lateral diffusion (cause (II)). SOLUTION: This solid-state image sensing device comprises a semiconductor chip which has photoelectric conversion parts made of silicon for converting an incident light signal to an electric charge signal, wherein a film thickness of the semiconductor chips is not less than 8μm, and each photoelectric conversion part includes at least either a p-type semiconductor portion or n-type semiconductor portion, and impurity concentration in the ranges of not less than 3μm in the film thickness direction of the photoelectric conversion part is held constant at a face extending parallel to the surface of the photoelectric conversion part, and also monotonically decreases in the direction from the front to the back in an n-type semiconductor portion, and monotonically increases in a p-type semiconductor portion. COPYRIGHT: (C)2008,JPO&INPIT
|
