| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces stress concentration on a corner of a trench groove, can restrain generation of defect in the corner, and has an element isolation structure showing satisfactory element isolation characteristics; and to provide its manufacturing method. SOLUTION: The semiconductor device has a semiconductor substrate 101 wherein a trench groove 105 is formed for element isolation. A second insulating film 106 constituted of isolation films 106a, 106b is buried in an inside of the trench groove 105. In an inner surface of an upper part of the trench groove 105, a first insulating film 107 is provided between the semiconductor substrate 101 and the insulating film 106b. When the first insulating film 107 is formed, only an upper part of an inner surface of the trench groove 105 is oxidized and a corner of the trench groove 105 is not oxidized. COPYRIGHT: (C)2008,JPO&INPIT
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