发明名称 |
Bottom resist layer composition and patterning process using the same |
摘要 |
There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography comprising, at least, a polymer comprising a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition that exhibits optimum n value and k value on exposure to shorter wavelengths, excellent etching resistance under conditions for etching substrates, and is promising for forming a bottom resist layer used for a multilayer-resist process such as a silicon-containing bilayer resist process or a trilayer resist process using a silicon-containing intermediate resist layer.
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申请公布号 |
US2008038662(A1) |
申请公布日期 |
2008.02.14 |
申请号 |
US20070822805 |
申请日期 |
2007.07.10 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA JUN;FUJII TOSHIHIKO;TAKEDA TAKANOBU |
分类号 |
G03C5/56;C08G65/22;C08G75/00;G03C1/04 |
主分类号 |
G03C5/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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