发明名称 Semiconductor Device With Damage Detection Circuit and Method for Producing the Same
摘要 A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the electrical node, and a first active component coupled in series with the current source and further coupled between the electrical node and a second potential, wherein the first active component is coupled to the electrical node via a first conductive interconnect.
申请公布号 US2008035923(A1) 申请公布日期 2008.02.14
申请号 US20070837187 申请日期 2007.08.10
申请人 INFINEON TECHNOLOGIES AG 发明人 TSCHMELITSCH ANDREAS;ZOJER GERHARD;HOLL GUENTER;HERZELE GUENTER
分类号 H01L29/10 主分类号 H01L29/10
代理机构 代理人
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