SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A substrate processing apparatus is provided with a reaction chamber for processing substrates; a seal cap which hermetically seals an opening section of the reaction chamber by abutting to one end of the reaction chamber on the opening section side through a first sealing member and a second sealing member; a first gas flow channel formed in a region between the first sealing member and the second sealing member by having the seal cap abut to the reaction chamber; a second gas flow channel arranged on the seal cap for communicating the first gas flow channel with the inside of the reaction chamber; a first gas supply port arranged on the reaction chamber for supplying the first gas flow channel with a first gas; and a second gas supply port arranged on the reaction chamber for supplying the reaction chamber inside with a second gas. A leading end opening, which is at a communicating section of the first gas supply port with the first gas flow channel, and a base end opening, which is at a communicating section of the second gas flow channel with the first gas flow channel, are at positions separated from each other, in a status where the seal cap is abutting to the reaction chamber.