| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with which electromigration or stress-induced void is suppressed and which exhibits a high connection reliability, and to provide its manufacturing method. SOLUTION: The semiconductor device includes an insulating film 10 which has a concave (wiring groove 10a) formed in a semiconductor substrate, a barrier metal film 12 which is formed in such a way that it covers the inner wall of the wiring groove 10a, a conductive film 14 which is formed on the barrier metal 12 in the wiring groove 10a, a wiring film 16 which is formed on the conductive film 14 in the wiring groove 10a, and a metal cap film 18 which is selectively formed on the top of the wiring film 16 and the conductive film 14. COPYRIGHT: (C)2008,JPO&INPIT
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