| 摘要 |
PROBLEM TO BE SOLVED: To improve process quality and yield by suppressing heat radiation from a furnace port in the processing furnace, and improving uniformity of temperature distribution within the substrate surface simultaneously with increase of uniform temperature length in the processing chamber in the substrate processing apparatus. SOLUTION: The substrate processing apparatus includes a processing chamber 46, a substrate holding means 32 for holding the required number of substrates 17 within the processing chamber, gas charging/discharging means 52, 55 for charging and discharging required amount of gas to and from the processing chamber, a rotating means 62 for rotating the substrate holding means, a heating means 80 provided to the substrate holding means opposing to at least the upper surface of the substrate respectively held with the substrate holding means, and an electrical power supplying means for supplying the electrical power on the non-contact basis through electromagnetic coupling to the heating means. COPYRIGHT: (C)2008,JPO&INPIT
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