发明名称 SEMICONDUCTOR APPARATUS WITH IMPROVED ESD WITHSTANDING VOLTAGE
摘要 A semiconductor apparatus having an outer ESD protective circuit corresponding to each external connection terminal, the outer ESD protective circuit being formed in a peripheral region around the external connection terminals. The outer ESD protective circuit discharges electrostatic voltage from the external connection terminal and avoids the damaging of an internal circuit of the semiconductor apparatus. Accordingly, the ESD withstanding voltage of the semiconductor apparatus is improved.
申请公布号 US2008036004(A1) 申请公布日期 2008.02.14
申请号 US20070761522 申请日期 2007.06.12
申请人 发明人 OKAZAKI MIHO
分类号 H01L23/62 主分类号 H01L23/62
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