| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a tunnel-type magnetic detection element capable of setting RA (product of element resistance R and element area A) to low and setting a resistance rate of change, orΔR/R, to high compared with a conventional example, and method of manufacturing the same. <P>SOLUTION: A laminate T1 constituting a tunnel-type magnetic detection element has a part formed by a fixed magnetism layer 4, an isolated blocking layer 5, and a free magnetism layer 6 from the bottom in this order. The isolated blocking layer 5 is formed by Ti-Mg-O, or oxidized titanium-magnesium. When assuming combination of the composition ratio of Ti and the composition ratio of Mg as 100 at%, Mg is contained by 4 at% or more and 20 at% or less. The Mg concentration of the isolated blocking layer 5 is not set high. This leads to that RA, or product of element resistance R and element area A, can be set low, and a resistance rate of change, orΔR/R, can be set high compared with a conventional example. In addition, an absolute value of VCR can be reduced compared with the conventional example. As a result, the heat resistance can be improved. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
