| 摘要 |
PROBLEM TO BE SOLVED: To provide a sufficient semiconductor device where a facet is not formed and to provide a manufacturing method of the semiconductor device. SOLUTION: In the semiconductor device 10, epilayers in square ring shapes which are single crystal-grown by chemical vapor deposition and whose crystal plane orientation of an outer face has a (100) face are concentrically arranged, in a face where the crystal plane orientation of a semiconductor is specified on the (100) face. The expansion epilayers 5 are arranged which expand from annular angles in the inner epilayer, are brought into contact with the outer epilayer by a right angle and whose crystal plane orientation on the outer face is the (100) face. COPYRIGHT: (C)2008,JPO&INPIT |
