发明名称 CIRCUIT FOR IMPROVING AMPLIFICATION AND NOISE CHARACTERISTICS OF MOS FIELD-EFFECT TRANSISTOR, AND FREQUENCY MIXER, AMPLIFIER AND OSCILLATOR USING THE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a circuit for improving amplification and noise characteristics of a MOS field-effect transistor (MOSFET), and a frequency mixer, an amplifier and an oscillator using the circuit in which, in amplification receiving an input signal of an equal power level when operating the MOSFET, a greater power and a higher level of amplification than the conventional art can be obtained and noise characteristics can be more improved. SOLUTION: In the circuit for improving amplification and noise characteristics of the MOSFET, as illustrated in Fig.1, a gate terminal G of the MOSFET is connected to a body terminal B of the MOSFET through a capacitor C and the gate and body terminals of the MOSFET are connected to a current source to simultaneously provide a signal to both the gate terminal and the body terminal, in order to improve amplification and noise characteristics of the MOSFET. As a result, a higher level of amplification than a case where a signal of the equal power level is inputted, can be obtained and noise characteristics are further improved. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008035466(A) 申请公布日期 2008.02.14
申请号 JP20060340270 申请日期 2006.12.18
申请人 RESEARCH & INDUSTRIAL COOPERATION GROUP 发明人 PARK CHUL SOON;KANG HO SUK
分类号 H03D7/00;H03B5/12;H03D7/12;H03D7/14;H03F1/26;H03F3/16 主分类号 H03D7/00
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