Semiconductor device and method for manufacturing the same

摘要

A semiconductor device includes a first MIS transistor and a second MIS transistor. The first MIS transistor includes: a first gate insulating film formed on a first active region of a substrate; and a first gate electrode formed on the first gate insulating film. The second MIS transistor includes: a second gate insulating film formed on a second active region of the substrate and having a dielectric constant lower than the first gate insulating film; and a second gate electrode formed on the second gate insulating film. Insulting sidewall spacers having the same structure are formed on respective side faces of the first gate electrode and the second gate electrode.