VARIABLE-RESISTANCE NONVOLATILE MEMORY ELEMENT AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a variable-resistance nonvolatile memory element having high reliability.

SOLUTION: The variable-resistance nonvolatile memory element can memorize information with the resistance change by the application of electrical stress, and consists of at least an electrode 2 formed on a substrate 1 and an oxide pn junction formed on the electrode 2. Oxides 3, 4 forming the oxide pn junction consist of a perovskite-type oxide thin film, and more preferably, the electrode 2 consists of the perovskite-type oxide thin film.

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