发明名称 SEMICONDUCTOR SEALING MATERIAL AND SEMICONDUCTOR ELEMENT SEALED WITH IT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor sealing material which can seal at a low temperature, has a high transmission factor and an excellent weather resistance, and is made up of a non-lead glass being difficult to react with a semiconductor; and to provide a semiconductor element sealed with it. <P>SOLUTION: The semiconductor sealing material is for sealing a semiconductor, the internal transmission factor at a thickness of 1 mm and a wavelength 588 nm is 80% or more, and is made up of an SnO-P<SB>2</SB>O<SB>5</SB>-B<SB>2</SB>O<SB>3</SB>of a softening poit 400&deg;C or lower. The semiconductor element is constructed in such a manner that the semiconductor is sealed with the above sealing material. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008034802(A) 申请公布日期 2008.02.14
申请号 JP20070123724 申请日期 2007.05.08
申请人 NIPPON ELECTRIC GLASS CO LTD 发明人 FUJITA SHUNSUKE;MAYAHARA YOSHIO
分类号 H01L23/29;C03C8/16;H01L23/31;H01L33/32;H01L33/56;H01L33/60 主分类号 H01L23/29
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