| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing rising of temperature of a transistor. SOLUTION: A first metal plate 1 and a second metal plate 2 of the same shape are tightly fitted to a heat sink 4 through a sheet-like insulator 3, with the ends of the metal plates 1 and 2 being in comb-like. In order that combs 2A and 2B of other metal plates 1 and 2 are positioned between adjoining combs 2A and 2B of metal plates 1 and 2, the combs 2A and 2B of both metal plates 1 and 2 are engaged each other. The end edges of other metal plates side of both metal plates 1 and 2 face each other through a gap. NPN transistors Q5 and Q6 of which the electric potential of a metal is identical are attached through the metal to each comb 2A of the first metal plate 1. PNP transistors Q7 and Q8 are attached of which the electric potential of a metal part is identical through the metal to each comb of the second metal plate. COPYRIGHT: (C)2008,JPO&INPIT |
