| 摘要 |
PROBLEM TO BE SOLVED: To achieve the high power output, the improvement of life time, and the suppression of light output power variation due to heat in a semiconductor device by efficient heat radiation. SOLUTION: In a semiconductor device having a configuration, a heat sink is attached to a stem on which a semiconductor laser element is mounted. An opening to pass through the heat sink is formed in the portion where the stem is set beforehand, a part of the heat sink is made to pass through from the opening, the end surface of the passed-through heat sink is fixed so as to contact a laser drive substrate for controlling the light-emitting operation of a laser light from the semiconductor laser element, and a metal film is provided which radiates heat from the heat sink to the predetermined region including the position which contacts the end surface of the laser drive substrate. COPYRIGHT: (C)2008,JPO&INPIT |
