发明名称 SINGLE SCAN IRRADIATION FOR CRYSTALLIZATION OF THIN FILMS
摘要 A method of processing a polycrystalline film on a substrate includes generating laser pulses, directing the laser pulses through a mask to generate patterned laser beams, each having a length l', a width w', and a spacing between adjacent beams d'; irradiating a region of the film with the patterned beams, said beams having an intensity sufficient to melt and to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating the film and/or the mask, in the x- and y-directions. The distance of translation in the y-direction is about l'/n-delta, where delta is a value selected to overlap the beamlets from one irradiation step to the next. The distance of translation in the x-direction is selected such that the film is moved a distance of about lambda' after n irradiations, where lambda'=w'+d'.
申请公布号 US2008035863(A1) 申请公布日期 2008.02.14
申请号 US20070876974 申请日期 2007.10.23
申请人 COLUMBIA UNIVERSITY 发明人 IM JAMES S.;VAN DER WILT PAUL C.
分类号 G21K5/10;C30B1/00;C30B3/00;C30B5/00;C30B13/24;G03F7/20;H01L 主分类号 G21K5/10
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