发明名称 METHOD OF DRIVING SOLID-STATE IMAGE SENSING DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that when AGP driving is applied to a CCD solid-state image sensing device having a lateral overflow drain structure, electric charges leak from an overflow drain region to a region where information charges are accumulated and then noise is superposed on information charges. SOLUTION: In the method of driving the solid-state image sensing device, which has a plurality of first channel regions to which information charges are transferred, an overflow drain region which absorbs information charges in the first channel region, a drain electrode connected to the overflow drain region, and a plurality of first transfer electrodes provided crossing the plurality of first channel regions, a plurality of potential wells where information charges are accumulated are formed in the first channel regions, information charges are transferred along the first channel regions, a first potential is applied to the drain electrode during accumulation driving wherein information charges are accumulated in the potential wells, and a second potential different from the first potential is applied to the drain electrode during transfer driving wherein information charges are transferred. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008035004(A) 申请公布日期 2008.02.14
申请号 JP20060204102 申请日期 2006.07.27
申请人 SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD 发明人 IZAWA SHINICHIRO
分类号 H01L27/148;H04N5/335;H04N5/359;H04N5/369;H04N5/372 主分类号 H01L27/148
代理机构 代理人
主权项
地址