| 摘要 |
A pattern forming method includes performing resist coating on a substrate, thereby forming a resist film; performing immersion light exposure in accordance with a predetermined pattern on the resist film formed on the substrate, while immersing the resist film in a high refractive index liquid having a refractive index higher than water; and performing development of the resist film after the immersion light exposure. Further, this method includes performing cleaning on the substrate by use of a cleaning liquid containing the same active ingredient as the high refractive index liquid in at least one of a first period after formation of the resist film and before the immersion light exposure and a second period after the immersion light exposure and before the development.
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