| 摘要 |
<p>Provided is an organic thin film transistor having a high switching current value even a distance (channel length) between source and drain electrodes is large. A method for manufacturing such organic thin film transistor is also provided. The organic thin film transistor is composed of a supporting body, a gate electrode, a gate insulating film, an organic semiconductor film, the source electrode, the drain electrode and at least one different type electrode. The different type electrode is formed on the organic semiconductor film in a channel region between the source and drain electrodes.</p> |
