| 摘要 |
A semiconductor device having an SOI structure including a semiconductor substrate, a buried insulating layer and an SOI layer including, first and second element formation regions provided in said SOI layer, a partial isolation region including a partial insulating film provided in an upper layer portion of said SOI layer and a semiconductor region to be a part of said SOI layer which is provided under said partial insulating film and serving to isolate said first and second element formation regions from each other, and first and second MOS transistors formed in said first and second element formation regions, respectively, wherein at least one of a structure of a body region, a structure of a gate electrode and presence/absence of body potential fixation in said first and second MOS transistors is varied to make transistor characteristics of said first and second MOS transistors different from each other.
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