发明名称 Cooled Lump From Molten Silicon And Process For Producing The Same
摘要 A solidified mass for a high-purity multicrystal silicon material that is preferably applicable to producing crystal type silicon ingots for photo voltaics, and a process for producing the solidified mass are provided. The mass of silicon solidified from molten state is a solidified mass produced by dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, said solidified mass containing bubbles and having (i) an apparent density of not less than 1.5 g/cm<SUP>3 </SUP>and not more than 2.2 g/cm<SUP>3 </SUP>and (ii) a compressive strength of not less than 5 MPa and not more than 50 MPa. The process for producing a mass of silicon solidified from molten state includes the steps of dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, wherein the surface temperature of the vessel for receiving the molten silicon is not lower than 0° C. and not higher than 1000° C., and the receiving vessel is allowed to receive the molten silicon at a rate of 1x10<SUP>-3 </SUP>to 5x10<SUP>-1 </SUP>g/sec.cm<SUP>2</SUP>.
申请公布号 US2008038177(A1) 申请公布日期 2008.02.14
申请号 US20050597222 申请日期 2005.05.23
申请人 TOKUYAMA CORPORATION 发明人 WAKAMATSU SATORU;NAKASHIMA JUNICHIROU;SUGIMURA SHIGEKI
分类号 C01B33/02;C30B11/00;C30B11/04;C30B29/06 主分类号 C01B33/02
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