| 摘要 |
Three layers of a SiC material oriented on a substrate with the top layer covered with a thick oxide. A mask comprising a plurality of strips is deposited on the oxide. An etch removes the oxide, the third layer, and a portion of the second layer, leaving a plurality of pillars. An oxidation step forms a skirt at the base of each pillar and consumes the edge portions of the third layer under the oxide forming a source. Ion implantation forms gate regions between the skirts while a plurality of guard rings is formed. Removal of all oxid results in a semiconductor structure to which source, gate and drain connections may be made to form a static induction transistor. A greater separation between a source and gate is obtained by placing a spacer layer on the sidewalls of the pillars, either before or afte formation of the skirt. |
