SINGLE-CRYSTAL SiC, PROCESS FOR PRODUCING THE SAME AND SINGLE-CRYSTAL SiC PRODUCTION APPARATUS

摘要

A process in which at high growth rate, there is produced a lengthy large-diameter single-crystal SiC of high quality with defects, such as micropipe, inhibited; and a production apparatus suitable for use in the production process. There is provided a process for producing a single-crystal SiC, including the steps of disposing a susceptor with an SiC seed single-crystal fixed thereto and a raw material feed pipe in a crucible; from outside, feeding a raw material for single-crystal SiC production through the raw material feed pipe to the SiC seed single-crystal held heated; and growing single-crystal SiC on the SiC seed single-crystal, characterized in that the crucible has an opening at its superior portion in the vertical direction.