| 摘要 |
A light extraction efficiency of a semiconductor light emitting element is improved. In the semiconductor light emitting element (10), a buffer layer (14), an n-type GaN layer (16), an InGaN light emitting layer (18) and a p-type GaN layer (32) are stacked on a sapphire substrate (12). On the p-type GaN layer (32), a ZnO layer (24) which functions as a transparent electrode is arranged, and on the surface of the ZnO layer (24), recessed sections are formed at two-dimensional periodic intervals. The periodic intervals Lz of the adjacent recessed sections are set within a range satisfying lambda/nZlambda<=LZ<=lambda/(nZlambdax(1-sinThetaZ)), where lambda is a wavelength of light from the InGaN light emitting layer (18) in the air, nZlambdais a refraction index of the light having the wavelength lambda in the ZnO layer, and ThetaZis the total reflection angle on an interface between the ZnO layer and a medium in contact with the ZnO layer.
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