发明名称 METHOD FOR CONTROLLING THE FIRST-TO-MELT REGION IN A PCM CELL AND DEVICES OBTAINED THEREOF
摘要 <p>A phase-change-memory cell is provided which comprises two insulated regions formed in a first phase-change material connected by a region formed in a second phase-change material. The crystallization temperature of the second phase-change material is below the crystallization temperature of the first phase-change material. By locally changing the material properties using a second PCM material, which switches phase at a lower temperature, a localized“hot spot”is obtained.</p>
申请公布号 EP1886317(A1) 申请公布日期 2008.02.13
申请号 EP20060744974 申请日期 2006.05.18
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V.;INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW 发明人 GOUX, LUDOVIC;WOUTERS, DIRK;LISONI, JUDITH;GILLE, THOMAS
分类号 G11C16/02 主分类号 G11C16/02
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